Bulk PPKTP by crystal growth from high temperature solution

Bulk PPKTP by crystal growth from high temperature solution

Periodically-poled ferroelectric crystals show unprecedented efficiency and properties otherwise impossible to reach. Unfortunately, the sample thickness obtainable today limits their use to low and moderate power application. With the aim of increasing the size of periodically domain-structured crystals with a controlled and regular grating period, we proposed an epitaxial growth process using...

SiC Bulk Single Crystal Growth

SiC single crystal is usually grown by sublimation (modified Lely method). There is a lotof remaining issues that should be solved. One is the technical problems of SiC single crystal growth process. And the other is the theoretical problem based on SiC physical properties. As the example of technical issues, in this paper, the example of design optimization for SiC sublimation growth is descri...

Computer Modelling of Bulk Crystal Growth

4 Transport Modelling in Bulk Crystal Growth 7 4.1 Governing Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 Boundary Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.3 Continuum Interface Representation . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.4 Radiation Heat Transfer Modelling . . . . . . . . . ....

High-temperature solution growth of intermetallic single crystals and quasicrystals

Solution growth continues to be one of the most powerful techniques for the production of single crystals for basic and applied research. It is a versatile technique that allows for the growth of congruently and incongruently melting materials with equal ease. The primary requirement for growth is that there be an exposed primary solidification surface in the appropriate equilibrium alloy phase...

Introduction to Crystal Growth Methods with Emphasis on Low Temperature Solution Growth Technique